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DMN63D8LDW-7

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DMN63D8LDW-7

Description : DMN63D8LDW-7 SOT-363-6

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOT-363-6
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	260 mA
Rds On - Drain-Source Resistance:	2.8 Ohms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	800 mV
Qg - Gate Charge:	870 pC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	400 mW
Channel Mode:	Enhancement
Series:	DMN63D8
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Dual
Fall Time:	6.3 ns
Forward Transconductance - Min:	80 mS
Product Type:	MOSFET
Rise Time:	3.2 ns
	3000
Subcategory:	MOSFETs
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	12 ns
Typical Turn-On Delay Time:	3.3 ns
Unit Weight:	0.000265 oz

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